Path:OKDatasheet > Halbleiter Datenblatt > SANYO Datenblatt > 2SJ306
2SJ306 spec: P-channel MOS silicon FET, very high-speed switching application
Ähnliche 2SJ306
- 2SJ306
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ307
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ308
- "P-channel MOS silicon FET, very high-speed switching application"
- 2SJ316
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ337
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ339
- P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
- 2SJ340
- P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
- 2SJ362
- P-channel MOS silicon FET, very high-speed switching application
2SJ306 Datenblatt und Spezifikationen
Hersteller : SANYO
Verpacken : 2063
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 90 KB
Application : P-channel MOS silicon FET, very high-speed switching application
2SJ306 PDF-Download