Path:OKDatasheet > Halbleiter Datenblatt > ST Microelectronics Datenblatt > MJD127T4
MJD127T4 spec: PNP darlington transistor for high DC current gain, 100V, 5A
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- PNP darlington transistor for high DC current gain, 100V, 5A
MJD127T4 Datenblatt und Spezifikationen
Hersteller : ST Microelectronics
Verpacken : TO-252
Pins : 3
Temperatur : Min -65 °C | Max 150 °C
Größe : 100 KB
Application : PNP darlington transistor for high DC current gain, 100V, 5A
MJD127T4 PDF-Download