Path:OKDatasheet > Halbleiter Datenblatt > ST Microelectronics Datenblatt > STH4N90
STH4N90 spec: Power dissipation 125 W Transistor polarity N Channel Current Id cont. 4.2 A Current Idm pulse 16 A Pitch lead 5.45 mm Voltage Vds max 900 V Resistance Rds on 3.2 R Temperature current 25 ?C
Hersteller : ST Microelectronics
Verpacken : TO-218
Pins : 0
Temperatur : Min 0 °C | Max 0 °C
Größe : 682 KB
Application : Power dissipation 125 W Transistor polarity N Channel Current Id cont. 4.2 A Current Idm pulse 16 A Pitch lead 5.45 mm Voltage Vds max 900 V Resistance Rds on 3.2 R Temperature current 25 ?C