Path:OKDatasheet > Halbleiter Datenblatt > ST Microelectronics Datenblatt > STH60N10FI
STH60N10FI spec: N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Ähnliche STH60N10FI
- STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
- STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6N100
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6N100FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
STH60N10FI Datenblatt und Spezifikationen
Hersteller : ST Microelectronics
Verpacken :
Pins : 0
Temperatur : Min 0 °C | Max 0 °C
Größe : 270 KB
Application : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH60N10FI PDF-Download