okDatasheet.com

Ähnliche STH8N80

  • STH8N80
    • Power dissipation 180 W Transistor polarity N Channel Current Id cont. 8.2 A Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R Temperature current 25 ?C Temperature power 25 ?C
  • STH8N80FI
    • Power dissipation 70 W Transistor polarity N Channel Current Id cont. 5.1 A Current Idm pulse 35 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R
  • STH8NA60FI
    • N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
  • STH8NB90FI
    • N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET

STH8N80 Datenblatt und Spezifikationen

Hersteller : ST Microelectronics 

Verpacken : TO-218 

Pins : 0 

Temperatur : Min 0 °C | Max 0 °C

Größe : 379 KB

Application : Power dissipation 180 W Transistor polarity N Channel Current Id cont. 8.2 A Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R Temperature current 25 ?C Temperature power 25 ?C 

STH8N80 PDF-Download