Path:OKDatasheet > Halbleiter Datenblatt > ST Microelectronics Datenblatt > STP6N50
STP6N50 spec: Power dissipation 100 W Transistor polarity N Channel Current Id cont. 6 A Current Idm pulse 24 A Pitch lead 2.54 mm Voltage Vds max 500 V Resistance Rds on 1.1 R Temperature current 25 ?C