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2N6798 spec: 200V Vdss N-Channel FET (field effect transistor)
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2N6798 Datenblatt und Spezifikationen
Hersteller : Semelab
Verpacken : TO39
Pins : 0
Temperatur : Min 0 °C | Max 0 °C
Größe : 23 KB
Application : 200V Vdss N-Channel FET (field effect transistor)
2N6798 PDF-Download