Path:OKDatasheet > Halbleiter Datenblatt > Semelab Datenblatt > IRFM250D
IRFM250D spec: 200V Vdss N-Channel FET (field effect transistor)
Ähnliche IRFM250D
- IRFM054
- 60V Vdss N-Channel FET (field effect transistor)
- IRFM150
- 100V Vdss N-Channel FET (field effect transistor)
- IRFM250
- 200V Vdss N-Channel FET (field effect transistor)
- IRFM250
- 200V Vdss N-Channel FET (field effect transistor)
- IRFM250D
- 200V Vdss N-Channel FET (field effect transistor)
- IRFM350
- 400V Vdss N-Channel FET (field effect transistor)
- IRFM450
- 500V Vdss N-Channel FET (field effect transistor)
IRFM250D Datenblatt und Spezifikationen
Hersteller : Semelab
Verpacken : TO254
Pins : 0
Temperatur : Min 0 °C | Max 0 °C
Größe : 26 KB
Application : 200V Vdss N-Channel FET (field effect transistor)
IRFM250D PDF-Download