Path:OKDatasheet > Halbleiter Datenblatt > Semelab Datenblatt > IRFY430M-T257
IRFY430M-T257 spec: 500V Vdss N-Channel FET (field effect transistor)
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- IRFY430M-T257
- 500V Vdss N-Channel FET (field effect transistor)
IRFY430M-T257 Datenblatt und Spezifikationen
Hersteller : Semelab
Verpacken : TO257AA
Pins : 0
Temperatur : Min 0 °C | Max 0 °C
Größe : 21 KB
Application : 500V Vdss N-Channel FET (field effect transistor)
IRFY430M-T257 PDF-Download