Path:OKDatasheet > Halbleiter Datenblatt > Shanghai Sunrise Datenblatt > 1N5406G
1N5406G spec: Glass passivated junction rerctifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 3.0 A.
Ähnliche 1N5406G
- 1N5400G
- Glass passivated junction rerctifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 3.0 A.
- 1N5401G
- Glass passivated junction rerctifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 3.0 A.
- 1N5402G
- Glass passivated junction rerctifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 3.0 A.
- 1N5404G
- Glass passivated junction rerctifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 3.0 A.
- 1N5406G
- Glass passivated junction rerctifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 3.0 A.
- 1N5407G
- Glass passivated junction rerctifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 3.0 A.
1N5406G Datenblatt und Spezifikationen
Hersteller : Shanghai Sunrise
Verpacken :
Pins : 2
Temperatur : Min -65 °C | Max 150 °C
Größe : 17 KB
Application : Glass passivated junction rerctifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 3.0 A.
1N5406G PDF-Download