Path:OKDatasheet > Halbleiter Datenblatt > Shanghai Sunrise Datenblatt > KBU6M
KBU6M spec: Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 6.0 A.
Ähnliche KBU6M
- KBU6A
- Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 6.0 A.
- KBU6B
- Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 6.0 A.
- KBU6G
- Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 6.0 A.
- KBU6J
- Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 6.0 A.
- KBU6K
- Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 6.0 A.
- KBU6M
- Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 6.0 A.
KBU6M Datenblatt und Spezifikationen
Hersteller : Shanghai Sunrise
Verpacken : KBU
Pins : 4
Temperatur : Min -55 °C | Max 150 °C
Größe : 16 KB
Application : Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 6.0 A.
KBU6M PDF-Download