RC10S06G spec: Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.

Ähnliche RC10S06G

RC10S01
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
RC10S01G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
RC10S02
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
RC10S02G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
RC10S04
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
RC10S04G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
RC10S06
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.
RC10S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.

RC10S06G Datenblatt und Spezifikationen

Verpacken :

Pins : 0

Temperatur : Min -50 °C | Max 150 °C

Größe : 15 KB

Application : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.