Path:OKDatasheet > Halbleiter Datenblatt > Stanford Microdevices Datenblatt > SXL-189-EB
SXL-189-EB spec: 800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance +42dBm typ. at 900 MHz. Eval board.
Ähnliche SXL-189-EB
- SXL-189-EB
- 800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance +42dBm typ. at 900 MHz. Eval board.
- SXL-189-TR1
- "800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance +42dBm typ. at 900 MHz. Devices per reel 500. Reel size 7""."
- SXL-208-BLK
- 800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept +46dBm typ. at 900 MHz. Devices per reel 100/TRAY.
- SXL-208-TR1
- 800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept +46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7
- SXL-208-TR2
- 800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept +46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13
- SXL-316-BLK
- 800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept +52dBm typ. at 850 MHz. Devices per reel 100/TRAY.
- SXL-316-TR1
- 800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept +52dBm typ. at 850 MHz. Devices per reel 500. Reel size 13".
- SXL-316-TR2
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SXL-189-EB Datenblatt und Spezifikationen
Hersteller : Stanford Microdevices
Verpacken : Surface-Mountable Pl
Pins : 4
Temperatur : Min -45 °C | Max 85 °C
Größe : 709 KB
Application : 800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance +42dBm typ. at 900 MHz. Eval board.
SXL-189-EB PDF-Download