Path:OKDatasheet > Halbleiter Datenblatt > TelCom Semiconductor Datenblatt > TC429EPA
TC429EPA spec: 6A single high-speed, CMOS power MOSFET driver.
Ähnliche TC429EPA
- TC426COA
- Dual high-speed power MOSFET driver. Wide operating supply voltage 4.5V to 18V. High peak output current 1.5A. Confiruration inverting.
- TC426CPA
- Dual high-speed power MOSFET driver. Wide operating supply voltage 4.5V to 18V. High peak output current 1.5A. Confiruration inverting.
- TC426EOA
- Dual high-speed power MOSFET driver. Wide operating supply voltage 4.5V to 18V. High peak output current 1.5A. Confiruration inverting.
- TC426EPA
- Dual high-speed power MOSFET driver. Wide operating supply voltage 4.5V to 18V. High peak output current 1.5A. Confiruration complementary.
- TC426IJA
- Dual high-speed power MOSFET driver. Wide operating supply voltage 4.5V to 18V. High peak output current 1.5A. Confiruration inverting.
- TC426MJA
- Dual high-speed power MOSFET driver. Wide operating supply voltage 4.5V to 18V. High peak output current 1.5A. Confiruration inverting.
- TC427COA
- Dual high-speed power MOSFET driver. Wide operating supply voltage 4.5V to 18V. High peak output current 1.5A. Confiruration noninverting.
- TC427CPA
- Dual high-speed power MOSFET driver. Wide operating supply voltage 4.5V to 18V. High peak output current 1.5A. Confiruration noninverting.
TC429EPA Datenblatt und Spezifikationen
Hersteller : TelCom Semiconductor
Verpacken : Plastic DIP
Pins : 8
Temperatur : Min -40 °C | Max 85 °C
Größe : 120 KB
Application : 6A single high-speed, CMOS power MOSFET driver.
TC429EPA PDF-Download