Path:OKDatasheet > Halbleiter Datenblatt > Transys Electronics Datenblatt > 1N5386B
1N5386B spec: 180 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
Ähnliche 1N5386B
- 1N5348B
- 11 V, 5 A, 5 W, glass passivated junction silicon zener diode
- 1N5350B
- 13 V, 1 A, 5 W, glass passivated junction silicon zener diode
- 1N5352B
- 15 V, 1 A, 5 W, glass passivated junction silicon zener diode
- 1N5353B
- 16 V, 1 A, 5 W, glass passivated junction silicon zener diode
- 1N5354B
- 17 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
- 1N5355B
- 18 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
- 1N5356B
- 19 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
- 1N5357B
- 20 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
1N5386B Datenblatt und Spezifikationen
Hersteller : Transys Electronics
Verpacken : DO-201AE
Pins : 2
Temperatur : Min -55 °C | Max 150 °C
Größe : 293 KB
Application : 180 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
1N5386B PDF-Download