Path:OKDatasheet > Halbleiter Datenblatt > Transys Datenblatt > 1N4747A
1N4747A spec: 20 V, 1 W, glass passivated junction silicon zener diode
Ähnliche 1N4747A
- 1N4756A
- "47 V, 1 W, glass passivated junction silicon zener diode"
- 1N4757A
- 51 V, 1 W, glass passivated junction silicon zener diode
- 1N4746A
- 18 V, 1 W, glass passivated junction silicon zener diode
- 1N4762A
- 82 V, 1 W, glass passivated junction silicon zener diode
- 1N4755A
- 43 V, 1 W, glass passivated junction silicon zener diode
- 1N4755A
- 43 V, 1 W, glass passivated junction silicon zener diode
- 1N4742A
- 12 V, 1 W, glass passivated junction silicon zener diode
- 1N4753A
- 36 V, 1 W, glass passivated junction silicon zener diode
1N4747A Datenblatt und Spezifikationen
Hersteller : Transys
Verpacken :
Pins : 2
Temperatur : Min -55 °C | Max 150 °C
Größe : 382 KB
Application : 20 V, 1 W, glass passivated junction silicon zener diode
1N4747A PDF-Download