Path:OKDatasheet > Halbleiter Datenblatt > Usha Datenblatt > 2N3055
2N3055 spec: High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
Ähnliche 2N3055
- 2N3055
- High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
- 2N3055
- NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications.
- 2N3055H
- NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications.
2N3055 Datenblatt und Spezifikationen
Hersteller : Usha
Verpacken : TO-3
Pins : 3
Temperatur : Min -65 °C | Max 200 °C
Größe : 52 KB
Application : High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
2N3055 PDF-Download