Ähnliche 2N6516

  • 2N6515
    • High voltage transistor. Collector-emitter voltage Vceo = 250V. Collector-base voltage Vcbo = 250V. Collector dissipation Pc(max) = 625mW.
  • 2N6516
    • High voltage transistor. Collector-emitter voltage Vceo = 250V. Collector-base voltage Vcbo = 250V. Collector dissipation Pc(max) = 625mW.
  • 2N6517
    • High voltage transistor. Collector-emitter voltage Vceo = 350V. Collector-base voltage Vcbo = 350V. Collector dissipation Pc(max) = 625mW.
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    • High voltage transistor. Collector-emitter voltage Vceo = -250V. Collector-base voltage Vcbo = -250V. Collector dissipation Pc(max) = 0.625W.
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    • High voltage transistor. Collector-emitter voltage Vceo = -300V. Collector-base voltage Vcbo = -300V. Collector dissipation Pc(max) = 0.625W.

2N6516 Datenblatt und Spezifikationen

Hersteller : Usha 

Verpacken :  

Pins : 3 

Temperatur : Min 0 °C | Max 150 °C

Größe : 75 KB

Application : High voltage transistor. Collector-emitter voltage Vceo = 250V. Collector-base voltage Vcbo = 250V. Collector dissipation Pc(max) = 625mW. 

2N6516 PDF-Download