Path:OKDatasheet > Halbleiter Datenblatt > Usha Datenblatt > 2SD227

2SD227 spec: Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA.

Ähnliche 2SD227

  • 2SD227
    • Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA.
  • 2SD261
    • Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 600mA.

2SD227 Datenblatt und Spezifikationen

Hersteller : Usha 

Verpacken :  

Pins : 3 

Temperatur : Min 0 °C | Max 150 °C

Größe : 81 KB

Application : Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. 

2SD227 PDF-Download