Path:OKDatasheet > Halbleiter Datenblatt > Usha Datenblatt > 2SD313
2SD313 spec: NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain 40 @ Ic = 2A. Pd = 30W.
Path:OKDatasheet > Halbleiter Datenblatt > Usha Datenblatt > 2SD313
2SD313 spec: NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain 40 @ Ic = 2A. Pd = 30W.
Hersteller : Usha
Verpacken : TO-220
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 50 KB
Application : NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain 40 @ Ic = 2A. Pd = 30W.