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MJE2955T spec: PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.
Ähnliche MJE2955T
- MJE2955T
- PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.
MJE2955T Datenblatt und Spezifikationen
Hersteller : Usha
Verpacken : TO-220
Pins : 3
Temperatur : Min -65 °C | Max 150 °C
Größe : 52 KB
Application : PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.
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