Path:OKDatasheet > Halbleiter Datenblatt > Usha Datenblatt > MJE3055T
MJE3055T spec: NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
Hersteller : Usha
Verpacken : TO-220
Pins : 3
Temperatur : Min -65 °C | Max 150 °C
Größe : 52 KB
Application : NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.