Ähnliche BDX53A

  • BDX53
    • NPN epitaxial silicon transistor. Collector-base voltage 45V. Collector-emitter voltage 45V. Emitter-base voltage 5V
  • BDX53A
    • NPN epitaxial silicon transistor. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V
  • BDX53B
    • NPN epitaxial silicon transistor. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V
  • BDX53C
    • NPN epitaxial silicon transistor. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V
  • BDX54
    • PNP epitaxial silicon transistor. Collector-base voltage -45V. Collector-emitter voltage -45V. Emitter-base voltage -5V
  • BDX54A
    • PNP epitaxial silicon transistor. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -5V
  • BDX54B
    • PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V
  • BDX54B
    • PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V

BDX53A Datenblatt und Spezifikationen

Hersteller : WingShing 

Verpacken : TO-220 

Pins : 3 

Temperatur : Min 0 °C | Max 0 °C

Größe : 23 KB

Application : NPN epitaxial silicon transistor. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V 

BDX53A PDF-Download