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Ähnliche S8550LT1

  • S8550
    • Transistor(PNP). Power dissipation 0.625W, Collector current -0.5A. Collector-base voltage -40V
  • S8550LT1
    • High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V

S8550LT1 Datenblatt und Spezifikationen

Hersteller : WingShing 

Verpacken : SOT-23 

Pins : 3 

Temperatur : Min 0 °C | Max 0 °C

Größe : 93 KB

Application : High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V 

S8550LT1 PDF-Download