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TIP147 spec: PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V
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TIP147 Datenblatt und Spezifikationen
Hersteller : WingShing
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Größe : 28 KB
Application : PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V
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