Path:OKDatasheet > Halbleiter Datenblatt > Alliance Datenblatt > AS4LC1M16S1-10TC
AS4LC1M16S1-10TC spec: 3.3V 1M x 16 CMOS synchronous DRAM, 1/frequency - 10 ns
Ähnliche AS4LC1M16S1-10TC
- AS4LC1M16E5-50JI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-60JC
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
- AS4LC1M16E5-60JI
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
AS4LC1M16S1-10TC Datenblatt und Spezifikationen
Hersteller : Alliance
Verpacken : TSOPII
Pins : 50
Temperatur : Min 0 °C | Max 70 °C
Größe : 783 KB
Application : 3.3V 1M x 16 CMOS synchronous DRAM, 1/frequency - 10 ns
AS4LC1M16S1-10TC PDF-Download