| Teil no | Hersteller | Application |
|---|
| ST230C04C1L | IR | Phase control thyristor |
| 47LR160D | IR | Standard recovery diode |
| IRGPH50MD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
| IRG4PC30S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A |
| IRL3803 | IR | N-channel power MOSFET for logic-level gate drive applications, 30V, 140A |
| IRF460 | IR | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A |
| 303UR80P5 | IR | Standard recovery diode |
| ST330S12M1L | IR | Phase control thyristor |
| 307URA160P3 | IR | Standard recovery diode |
| ST330S04P0 | IR | Phase control thyristor |
| ST333C08CHK3L | IR | Inverter grade thyristor |
| IRFU3706 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0mOhm, ID = 75A |
| ST180S12M1VL | IR | Phase control thyristor |
| SD253N16S15MBV | IR | Fast recovery diode |
| IRFPC50A | IR | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 0.58 Ohm, ID = 11 A |
| IR6220 | IR | Intelligent high side mosfet power switch |
| IRF3708 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12 mOhm, ID = 62A |
| 45LF20 | IR | Standard recovery diode |
| IRFU120N | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A |
| SD103N04S20PBC | IR | Fast recovery diode |
| IRF340 | IR | HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 10A |
| IRC740 | IR | HEXFET power MOSFET. Continuous drain current 10A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 0.55 Ohm |
| ST330C08C1 | IR | Phase control thyristor |
| ST2100C32R1L | IR | Phase control thyristor |
| 309UA160P5 | IR | Standard recovery diode |
| SD200N04MBC | IR | Standard recovery diode |
| 301UR80 | IR | Standard recovery diode |
| IRU1075CT | IR | 7.5A low dropout positive adjustable regulator |
| SD400R04PSC | IR | Standard recovery diode |
| ST330C08C1L | IR | Phase control thyristor |
