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IRF1310N spec: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.
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IRF1310N Datenblatt und Spezifikationen
Hersteller : IR
Verpacken :
Pins : 3
Temperatur : Min -55 °C | Max 175 °C
Größe : 105 KB
Application : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.
IRF1310N PDF-Download