Ähnliche IRF1902

  • IRF1010E
    • HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
  • IRF1010EL
    • HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
  • IRF1010ES
    • HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
  • IRF1010N
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
  • IRF1010NL
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
  • IRF1010NS
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
  • IRF1104
    • HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.
  • IRF130
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A

IRF1902 Datenblatt und Spezifikationen

Hersteller : IR 

Verpacken : SO-8 

Pins : 3 

Temperatur : Min -55 °C | Max 150 °C

Größe : 117 KB

Application : "HEXFET power MOSFET. VDSS = 20V, RDS(on) = 85 mOhm, ID = 4.0A @ VGS=4.5V, RDS(on) = 170 mOhm, ID = 3,2A @ VGS=2.7V" 

IRF1902 PDF-Download