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IRF5210S spec: HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
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IRF5210S Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : DDPak
Pins : 3
Temperatur : Min -55 °C | Max 175 °C
Größe : 204 KB
Application : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210S PDF-Download