Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRF5803D2
IRF5803D2 spec: FETKY MOSFET & schottky diode. VDSS = -40V, RDS(on) = 112 mOhm, schottky Vf = 0.51V
Ähnliche IRF5803D2
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5803D2 Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : SO
Pins : 8
Temperatur : Min -55 °C | Max 150 °C
Größe : 139 KB
Application : FETKY MOSFET & schottky diode. VDSS = -40V, RDS(on) = 112 mOhm, schottky Vf = 0.51V
IRF5803D2 PDF-Download