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IRF5806 spec: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5V
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IRF5806 Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : Micro6
Pins : 6
Temperatur : Min -55 °C | Max 150 °C
Größe : 239 KB
Application : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5V
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