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IRF5N5210 spec: HEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31A
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRF5N5210
IRF5N5210 spec: HEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31A
Hersteller : IR
Verpacken : SMD-1
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 129 KB
Application : HEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31A