Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRF5NJ5305
IRF5NJ5305 spec: HEXFET power MOSFET surface mount. BVDSS = -55V, RDS(on) = 0.065 Ohm, ID = -22A
Ähnliche IRF5NJ5305
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5NJ5305 Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : SMD-0.5
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 129 KB
Application : HEXFET power MOSFET surface mount. BVDSS = -55V, RDS(on) = 0.065 Ohm, ID = -22A
IRF5NJ5305 PDF-Download