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IRFBG20 spec: HEXFET power MOSFET. VDSS = 1000V, RDS(on) = 11Ohm, ID = 1.4A
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IRFBG20 Datenblatt und Spezifikationen
Hersteller : IR
Verpacken :
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 185 KB
Application : HEXFET power MOSFET. VDSS = 1000V, RDS(on) = 11Ohm, ID = 1.4A
IRFBG20 PDF-Download