Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRFU9310
IRFU9310 spec: HEXFET power MOSFET. VDSS = -400V, RDS(on) = 7.0 Ohm, ID = -1.8A
Ähnliche IRFU9310
- IRFU024N
- Power MOSFET, 55V, 17A
- IRFU120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFU120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFU13N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.18 Ohm, ID = 14A
- IRFU13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFU13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFU210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFU214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A
IRFU9310 Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : TO-251AA
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 127 KB
Application : HEXFET power MOSFET. VDSS = -400V, RDS(on) = 7.0 Ohm, ID = -1.8A
IRFU9310 PDF-Download