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BD241 spec: 4mW NPN silicon epitaxial base power transistor
Ähnliche BD241
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD241 Datenblatt und Spezifikationen
Hersteller : Micro Electronics
Verpacken : TO-220B
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 106 KB
Application : 4mW NPN silicon epitaxial base power transistor
BD241 PDF-Download