Path:OKDatasheet > Halbleiter Datenblatt > Micro Electronics Datenblatt > BD242B
BD242B spec: 4mW NPN silicon epitaxial base power transistor
Ähnliche BD242B
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD242B Datenblatt und Spezifikationen
Hersteller : Micro Electronics
Verpacken : TO-220B
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 107 KB
Application : 4mW NPN silicon epitaxial base power transistor
BD242B PDF-Download