Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt
Stichwort: NTE Electronic Datenblatt, NTE Electronic Datasheet, NTE Electronic Data Sheet, NTE Electronic Datenblätter, NTE Electronic Components
Path:OKDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt
Stichwort: NTE Electronic Datenblatt, NTE Electronic Datasheet, NTE Electronic Data Sheet, NTE Electronic Datenblätter, NTE Electronic Components
Um den spezifischen NTE Electronic ComponentsDatenblatt, Suche okDatasheet Zahl von Teilzeitbeschäftigten oder Komponente Beschreibung. Es wird Ihnen eine Liste aller passenden Teile mit NTE Electronic Datenblätter. Klicken Sie auf einen beliebigen aufgelisteten elektronisches Bauteil, um mehr Informationen einschließlich aller Angaben.
NTE Electronic offizielle Webseite
Teil no | Application |
---|---|
NTE469 | Silicon N-channel JFET transistor. Chopper, high speed switch. |
NTE103A | Germanium complementary transistor NPN medium power amplifier. |
NTE1907 | Integrated circuit. 3 terminal negative voltage regulator, -18V, 100mA. |
NTE1794 | Integrated circuit. Voltage controlled amp (VCA) for dbx noise reduction system. |
NTE17 | Silicon complementary PNP transistor. Low noise, general purpose amplifier. |
NTE235 | Silicon NPN transistor. Final RF power output. |
NTE312 | N-channel silicon junction. Field effect transistor. |
NTE7072 | Integrated circuit. Dual DC controlled potentiometer circuit. |
NTE981 | Integrated circuit. Positive 3 terminal voltage regulator, 100mA. Vout = 8V, Vin = 30V. |
NTE1536 | Integrated circuit. CB transceiver PLL frequency synthesizer. |
NTE3035A | Phototransistor detector. |
NTE5079A | Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 20V. Zener test current Izt = 12.5mA. |
NTE2358 | Silicon complementary PNP transistor. Digital w/2 built-in 22k bias resistors. |
NTE5351 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage, Vrrom = 600V. |
NTE5412 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V. |
NTE1312 | Integrated cicuit. Vertical OSC, amplifier. |
NTE6412 | Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 63V (typ). |
NTE390 | Silicon complementary (to NTE391) NPN transistor. General purpose. |
NTE1789 | Integrated circuit. TV sound preamp, AF output, volume control. |
NTE709 | Integrated circuit. TV/FM sound IF amplifier. |
NTE5942 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 15A. |
NTE4993 | Surge clamping, transient overvoltage suppressor, bidirectional. VR = 273.00V max reverse stand off voltage. |
NTE5482 | Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 100V. Forward current RMS Itrms = 8A. |
NTE5232A | Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 200V. Zener test current Izt = 12mA. |
NTE16004 | Silicon comlementary PNP transistor. High current, general purpose. |
NTE3046 | Optoisolator. SCR photothyristor output. |
NTE2026 | Integrated circuit. Gas-discharge display driver. |
NTE948SM | Integrated circuit. Quad operational amplifier. |
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