Ähnliche MGW20N120

  • MGW20N120
    • Insulated Gate Bipolar Transistor N-Channel
  • MGW21N60ED
    • Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGW20N120 Datenblatt und Spezifikationen

Hersteller : ON Semiconductor 

Verpacken : TO-247 

Pins : 3 

Temperatur : Min 0 °C | Max 0 °C

Größe : 152 KB

Application : Insulated Gate Bipolar Transistor N-Channel 

MGW20N120 PDF-Download