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MGW21N60ED spec: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
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- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED Datenblatt und Spezifikationen
Hersteller : ON Semiconductor
Verpacken : TO-247
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 167 KB
Application : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED PDF-Download