1N5381B spec: Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 130V, Izt =10mA

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1N5381B Datenblatt und Spezifikationen

Hersteller : PanJit

Verpacken : DO-201AE

Pins : 2

Temperatur : Min -55 °C | Max 150 °C

Größe : 336 KB

Application : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 130V, Izt =10mA