Path:okDatasheet > Halbleiter Datenblatt > PanJit Datenblatt > PanJit-64

1SMB3EZ17 3KP13A SA7.0C 1N5930B P4KE39C P4SMAJ70C SD1050YT 3.0SMCJ28C ER1D SD360S BZT52-C5V6S MMSZ5232BS P6SMBJ26A P6KE16A SA15 ES1G P6KE8.2C P6SMBJ220C 1SMC5382 GBJ4D SD840S SD530T MMBZ5246B UF803F 3.0SMCJ11A GBU10K FR1D 3EZ56

PanJit Datenblätter Katalog-64

Teil noHerstellerApplication
P6SMBJ8.5C PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 8.5 V. Vbr(min/max) = 9.44/11.92 V. It = 1.0 mA. Ir = 20 uA. Vc = 15.9 V. Ipp = 37.7 A.
P4KE10CA PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 8.55V, Vbr(min/max) = 9.50/10.50V, It = 1 mA.
1SMB3EZ17 PanJitSurface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 17 V. Test current Izt = 44 mA
3KP13A PanJitGlass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 13.00 V. Vbr = 14.40 V (min), 16.50 V (max). It = 1 mA.
SA7.0C PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 7.00V, Vbr(min/max) = 7.78/9.86V, It = 10 mA.
1N5930B PanJitGlass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 16V. Test current Izt = 23.4 mA.
P4KE39C PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 31.60V, Vbr(min/max) = 35.10/42.90V, It = 1 mA.
P4SMAJ70C PanJitSurfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 70 V. Breakdown voltage(min/max) 77.8/98.6 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 125 V. Peak pulse current 3.2 A.
SD1050YT PanJitDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 75degC 10.0 A.
3.0SMCJ28C PanJitSurface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 28 V. Vbr(max/min) = 31.1/39.4 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 50.0 V @ Ipp = 60.0 A.
ER1D PanJitSurface mount superfast rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified current 1.0A.
SD360S PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 3 A.
BZT52-C5V6S PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 5.6 V
MMSZ5232BS PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 5.6 V @ Izt. 200 mWatts zener diode.
P6SMBJ26A PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 26 V. Vbr(min/max) = 28.9/33.2 V. It = 1.0 mA. Ir = 5 uA. Vc = 42.1 V. Ipp = 14.2 A.
P6KE16A PanJitGlass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 13.60V, Vbr(min/max) = 15.20/16.80V, It = 1 mA.
SA15 PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 15.00V, Vbr(min/max) = 16.70/21.10V, It = 1 mA.
ES1G PanJitSurface mount superfast rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current 1.0 A.
P6KE8.2C PanJitGlass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 6.63V, Vbr(min/max) = 7.38/9.02V, It = 10 mA.
P6SMBJ220C PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V. It = 1.0 mA. Ir = 5 uA. Vc = 394 V. Ipp = 1.5 A.
1SMC5382 PanJitSurface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 140 V. Test current Izt = 8 mA.
GBJ4D PanJitGlass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0 A(Tc=100degC).
SD840S PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 85degC 8.0 A.
SD530T PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 5 A.
MMBZ5246B PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 16 V @ Izt. 500 mWatts zener diode.
UF803F PanJitIsolation ultrafast switching rectifier. Max recurrent peak reverse voltage 300 V. Max average forward rectified current 8.0 A.
3.0SMCJ11A PanJitSurface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 11 V. Vbr(max/min) = 12.2/14.0 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 18.2 V @ Ipp = 184.8 A.
GBU10K PanJitGlass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified output current at Tc=100degC 10.0 A.
FR1D PanJitSurface mount fast switching rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified current 1.0 A.
3EZ56 PanJitGlass passivated junction silicon zener. Power 3.0 Watts. Vz = 56 V. Izt = 13 mA.

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