Path:okDatasheet > Halbleiter Datenblatt > PanJit Datenblatt > PanJit-76
CA MMSZ5250BS 1.5SMCJ130CA P6KE91C SB2520FCT PS208R PS150R 1.5SMCJ70C SB240 P4SMAJ8.5CA ER203 AM154 1.5SMCJ170A FL408 P4KE10 2EZ100 S1M 3.0SMCJ51A MMSZ5248B SA17A P4SMAJ58A 1SMB3EZ43 3.0SMCJ9.0C UF100S P4KE150C 1SMC5362 BZT52-C12 SA8.0C PG302R
Teil no | Hersteller | Application |
---|---|---|
P4SMAJ20CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 20 V. Breakdown voltage(min/max) 22.2/25.5 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 32.4 V. Peak pulse current 12.3 A. |
1.5SMCJ70CA | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 70V; Vbr(min/max) = 77.8/89.5V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 113V, @ Ipp = 13.3A |
MMSZ5250BS | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 20 V @ Izt. 200 mWatts zener diode. |
1.5SMCJ130CA | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 130V; Vbr(min/max) = 144/165.5V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 209V, @ Ipp = 7.2A |
P6KE91C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 73.70V, Vbr(min/max) = 81.90/100.00V, It = 1 mA. |
SB2520FCT | PanJit | Isolation Schottky barrier rectifier. Max recurrent peak reverse voltage 20.0 V. Max average forward rectified current at Tc = 90degC 25 A. |
PS208R | PanJit | Fast switching plastic rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 2.0 A. |
PS150R | PanJit | Fast switching plastic rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.5 A. |
1.5SMCJ70C | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 70V; Vbr(min/max) = 77.8/98.6V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 125V, @ Ipp = 12.0A |
SB240 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current 0.375inches lead length at Ta = 75degC 2.0 A. |
P4SMAJ8.5CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 8.5 V. Breakdown voltage(min/max) 9.44/10.82 V. Test current 1.0 mA. Reverse leakage 20 uA. Max clamp voltage 14.4 V. Peak pulse current 27.7 A. |
ER203 | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 300V. Max average forward current 2.0 A. |
AM154 | PanJit | Silicon miniature single-phase bridge. Max recurrent peak reverse voltage 400 V. Max average forward current 1.5 A. |
1.5SMCJ170A | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 170V; Vbr(min/max) = 189/217.5V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 275V, @ Ipp = 5.5A |
FL408 | PanJit | In-line miniature single phase silicon bridge. Max recurrent peak reverse voltage 800V. Max average rectified output current 4.0 A. |
P4KE10 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 8.10V, Vbr(min/max) = 9.00/11.00V, It = 1mA. |
2EZ100 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 100.0 V. Test current Izt = 5.0 mA. |
S1M | PanJit | Surfase mount rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current at Tl = 100degC 1.0 A. |
3.0SMCJ51A | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 51 V. Vbr(min/max) = 56.7/65.2 V @ It. Ir = 5 uA @ Vrwm. Vc = 82.4 V @ Ipp = 36.4 A. |
MMSZ5248B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 18 V @ Izt. 500 mWatts zener diode. |
SA17A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 17.00V, Vbr(min/max) = 18.90/21.70V, It = 1 mA. |
P4SMAJ58A | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 58 V. Breakdown voltage(min/max) 64.4/74.1 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 93.6 V. Peak pulse current 4.3 A. |
1SMB3EZ43 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 43 V. Test current Izt = 17 mA |
3.0SMCJ9.0C | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 9.0 V. Vbr(max/min) = 10.0/12.6 V @ It = 1.0 mA. Ir = 10 uA @ Vrwm. Vc = 16.9 V @ Ipp = 177.4 A. |
UF100S | PanJit | Ultrafast switching rectifier. Peak reverse voltage 50 V. Average forward current 1.0 A. |
P4KE150C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 121.00V, Vbr(min/max) = 135.00/165.00V, It = 1 mA. |
1SMC5362 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 28 V. Test current Izt = 50 mA. |
BZT52-C12 | PanJit | Surface mount silicon zener diode. Power 410 mWatts. Nominal zener voltage 12 V @ Iz = 5 mA. |
SA8.0C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 8.00V, Vbr(min/max) = 8.89/11.30V, It = 1 mA. |
PG302R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 200 A. Max average forward rectified current 9.5mm lead lehgth at Ta = 55degC 3.0 A. |