| Teil no | Hersteller | Application |
|---|
| P6KE100CA | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 85.50V, Vbr(min/max) = 95.00/105.00V, It = 1 mA. |
| PS156 | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 9.5mm lead length at Ta = 60degC 1.5 A. |
| P4KE82A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 70.10V, Vbr(min/max) = 77.90/86.10V, It = 1mA. |
| BZX84C3V9W | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 3.9 V |
| SK25 | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 2.0 A. |
| P600D | PanJit | High current plastic silicon rectifier. Max recurrent peak reverse voltage 200 A. Max average forward rectified current at Ta = 55degC 6.0 A. |
| 1.5SMCJ7.0C | PanJit | 1500 W peak power pulse surfase mount transient voltage suppressor. Vrwm = 7.0V, Vbr(min/max) = 7.78/9.86V, @ It = 10mA; Ir = 400uA (@ Vrwm); Vc = 13.3V @ Ipp = 112.8A. |
| GBP304 | PanJit | In-line glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 400 V. Max average rectified output current at 50degC ambient 3.0 A. |
| P4KE33C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 26.80V, Vbr(min/max) = 29.70/36.30V, It = 1 mA. |
| ER201 | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 100V. Max average forward current 2.0 A. |
| MMBZ5235BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 6.8 V @ Izt. 200 mWatts zener diode. |
| P6SMBJ14CA | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 14 V. Vbr(min/max) = 15.6/17.9 V. It = 1.0 mA. Ir = 5 uA. Vc = 23.2 V. Ipp = 25.8 A. |
| 1.5SMCJ150 | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 150V; Vbr(min/max) = 167/211.5V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 268V, @ Ipp = 5.6A |
| 15KP54A | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 54 V. Vbr(min/max) = 60.0/69.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 87.1 V @ Ipp = 171 A. |
| P4KE200C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 162.00V, Vbr(min/max) = 180.00/220.00V, It = 1 mA. |
| SA16 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 16.00V, Vbr(min/max) = 17.80/22.60V, It = 1 mA. |
| SB820 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 100degC 8 A. |
| P6KE120C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 97.20V, Vbr(min/max) = 108.00/132.00V, It = 1 mA. |
| 1SMB2EZ16 | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 16.0 V. Test current Izt = 31.2 mA |
| 1.5SMCJ26A | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 26V; Vbr(min/max) = 28.9/33.2V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 42.1V, @ Ipp = 35.6A |
| 1.5SMCJ160CA | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 160V; Vbr(min/max) = 178/205V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 259V, @ Ipp = 5.8A |
| 3.0SMCJ120C | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 120 V. Vbr(min/max) = 133/169.0V @ It. Ir = 5 uA @ Vrwm. Vc = 214 V @ Ipp = 14.0 A. |
| 1.5SMCJ9.0 | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 9.0V; Vbr(min/max) = 10.0/12.6V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 16.9V @ Ipp = 88.7A |
| BZT52-C27S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 27 V |
| GBU6B | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified output current at Tc=100degC 6.0 A. |
| GBL401 | PanJit | Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). |
| P600B | PanJit | High current plastic silicon rectifier. Max recurrent peak reverse voltage 100 A. Max average forward rectified current at Ta = 55degC 6.0 A. |
| P4SMAJ8.5C | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 8.5 V. Breakdown voltage(min/max) 9.44/11.92 V. Test current 1.0 mA. Reverse leakage 20 uA. Max clamp voltage 15.9 V. Peak pulse current 25.1 A. |
| 1U4G | PanJit | Glass passivated junction ultrafast switching rectifier. Current 1.0 A. Peak reverse voltage 400 V. |
| 1N5381B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 130V, Izt =10mA |
