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VTE3324LA spec: GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
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VTE3324LA Datenblatt und Spezifikationen
Hersteller : PerkinElmer
Verpacken : T-1
Pins : 2
Temperatur : Min -40 °C | Max 100 °C
Größe : 24 KB
Application : GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
VTE3324LA PDF-Download