Path:OKDatasheet > Halbleiter Datenblatt > PerkinElmer Datenblatt > VTE3372LA
VTE3372LA spec: "GaALAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm)."
Ähnliche VTE3372LA
- VTE3322LA
- GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
- VTE3324LA
- GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
- VTE3372LA
- "GaALAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm)."
- VTE3374LA
- GaALAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
VTE3372LA Datenblatt und Spezifikationen
Hersteller : PerkinElmer
Verpacken : T-1
Pins : 2
Temperatur : Min -40 °C | Max 100 °C
Größe : 27 KB
Application : "GaALAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm)."
VTE3372LA PDF-Download