Path:OKDatasheet > Halbleiter Datenblatt > Philips Datenblatt > PHD11N03LT
PHD11N03LT spec: 30 V, N-channel trenchMOS transistor logic level FET
Ähnliche PHD11N03LT
- PHD10N10E
- PowerMOS transistor
- PHD10N10E
- PowerMOS transistor
- PHD11N03LT
- 30 V, N-channel trenchMOS transistor logic level FET
- PHD11N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHD11N06LT
- TrenchMOS transistor. Logic level FET.
- PHD11N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHD11N06LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHD12N10E
- PowerMOS transistor
PHD11N03LT Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : SOT
Pins : 3
Temperatur : Min -55 °C | Max 175 °C
Größe : 117 KB
Application : 30 V, N-channel trenchMOS transistor logic level FET
PHD11N03LT PDF-Download