Path:OKDatasheet > Halbleiter Datenblatt > Polyfet RF Datenblatt > F1206
F1206 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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F1206 Datenblatt und Spezifikationen
Hersteller : Polyfet RF
Verpacken :
Pins : 2
Temperatur : Min -65 °C | Max 150 °C
Größe : 39 KB
Application : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1206 PDF-Download