Path:OKDatasheet > Halbleiter Datenblatt > Polyfet RF Datenblatt > F1209
F1209 spec: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209 Datenblatt und Spezifikationen
Hersteller : Polyfet RF
Verpacken :
Pins : 8
Temperatur : Min -65 °C | Max 150 °C
Größe : 39 KB
Application : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209 PDF-Download